MJD47T4 STMicroelectronics, MJD47T4 Datasheet - Page 2

TRANSISTOR NPN 250V 1A DPAK

MJD47T4

Manufacturer Part Number
MJD47T4
Description
TRANSISTOR NPN 250V 1A DPAK
Manufacturer
STMicroelectronics
Type
High Voltage, Powerr
Datasheets

Specifications of MJD47T4

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
250V
Vce Saturation (max) @ Ib, Ic
1V @ 200mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 300mA, 10V
Power - Max
15W
Frequency - Transition
10MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current, Collector
1 A
Current, Gain
10
Frequency
10 MHz
Package Type
TO-252
Polarity
NPN
Power Dissipation
15 W
Primary Type
Si
Resistance, Thermal, Junction To Case
8.33 °C/W
Voltage, Breakdown, Collector To Emitter
250 V
Voltage, Collector To Base
350 V
Voltage, Collector To Emitter
250 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2482-2

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MJD47
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/6
Safe Operating Area
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
V
R
R
CEO(sus)
CE(sat)
BE(on)
thj-case
h
I
I
thj-amb
I
CEO
CES
EBO
h
FE
f
T
fe
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
Transition Frequency
Small Signal Current
Gain
C
B
= 0)
= 0)
Parameter
B
BE
= 0)
= 0)
V
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
CE
CE
EB
= 30 mA
= 1 A
= 1 A
= 0.3 A
= 1 A
= 0.2 A
= 0.2 A
= 5 V
= 350 V
= 150 V
case
= 25
Test Conditions
V
V
V
I
V
V
B
o
CE
CE
CE
CE
CE
C unless otherwise specified)
= 0.2 A
= 10 V
= 10 V f = 2MHz
= 10 V f = 1KHz
= 10 V
= 10 V
Derating Curves
Max
Max
Min.
250
10
25
30
10
Typ.
8.33
100
Max.
150
0.1
0.1
1.5
1
1
o
o
Unit
MHz
mA
mA
mA
C/W
C/W
V
V
V

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