BUJ106A,127 NXP Semiconductors, BUJ106A,127 Datasheet

TRANS NPN 700V 10A TO-220AB

BUJ106A,127

Manufacturer Part Number
BUJ106A,127
Description
TRANS NPN 700V 10A TO-220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BUJ106A127.pdf (7 pages)

Specifications of BUJ106A,127

Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1V @ 1.2A, 6A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
14 @ 500mA, 5V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
934055447127
BUJ106A
BUJ106A
Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
March 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
V
I
I
P
V
h
t
SYMBOL
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
f
C
CM
B
BM
PIN
FEsat
stg
j
CESM
CBO
CEO
tot
CEsat
tab
CESM
CEO
CBO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
I
I
CONDITIONS
V
T
CONDITIONS
in free air
C
C
C
1 2 3
mb
mb
1
BE
BE
= 6.0 A;I
= 6.0 A; V
= 5.0 A; I
= 0 V
= 0 V
25 ˚C
25 ˚C
B
B1
= 1.2 A
CE
= 1 A
= 5 V
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
-65
0.4
10
20
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
e
c
1.56
700
700
400
700
400
700
150
150
BUJ106A
1.0
10
20
80
15
50
10
20
10
80
5
-
Rev 2.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
A
A
V
V
V
V
A
A
A
A

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BUJ106A,127 Summary of contents

Page 1

Philips Semiconductors Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL ...

Page 2

Philips Semiconductors Silicon Diffused Power Transistor STATIC CHARACTERISTICS ˚C unless otherwise specified mb SYMBOL PARAMETER I ,I Collector cut-off current CES CBO I CES I Collector cut-off current CEO I Emitter cut-off current EBO V Collector-emitter sustaining ...

Page 3

Philips Semiconductors Silicon Diffused Power Transistor 300R 6V 30-60 Hz Fig.1. Test circuit for 250 100 10 0 VCE / V Fig.2. Oscilloscope display for V VIM Fig .3. Test circuit ...

Page 4

Philips Semiconductors Silicon Diffused Power Transistor Normalised Power Derating PD% 120 110 100 Tmb / C Fig.7. Normalised power dissipation. PD% = 100 PD/PD 25˚C ...

Page 5

Philips Semiconductors Silicon Diffused Power Transistor IC 100 200 300 400 500 VCEclamp/V Fig.13. Reverse bias safe operating area (T for -V = 5V,3V and 1V. be March 1999 IBon -5V ...

Page 6

Philips Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1999 10,3 max 3,7 ...

Page 7

Philips Semiconductors Silicon Diffused Power Transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

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