BST39,115 NXP Semiconductors, BST39,115 Datasheet - Page 4

• Manufacturer Part Number: BST39,115
• Description: TRANSISTOR NPN 350V 100MA SOT-89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BST39,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 20mA, 10V
• Power - Max: 1.3W
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 70 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933516290115; BST39 T/R; BST39 T/R

NXP Semiconductors
PACKAGE OUTLINE
2004 Dec 14
NPN high-voltage transistors
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT89
1.6
1.4
A
b p1
0.48
0.35
0.53
0.40
b p2
w
IEC
M
b p3
1.8
1.4
0.44
0.23
1
c
b
e
p1
1
TO-243
JEDEC
4.6
4.4
D
0
b
D
e
p3
REFERENCES
2
2.6
2.4
E
b
p2
3.0
e
SC-62
scale
JEITA
4
2
3
1.5
e 1
L
B
A
E
p
4.25
3.75
H E
1.2
0.8
4 mm
L p
0.13
w
PROJECTION
EUROPEAN
c
H
E
BST39; BST40
Product data sheet
ISSUE DATE
04-08-03
06-03-16
SOT89