PBSS4540X,135 NXP Semiconductors, PBSS4540X,135 Datasheet - Page 7

• Manufacturer Part Number: PBSS4540X,135
• Description: TRANS PNP 40V 4A SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4540X,135

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 355mV @ 500mA, 5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 4 A
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 550 mW
• Maximum Operating Frequency: 70 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057105135; PBSS4540X /T3; PBSS4540X /T3

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Nov 04
I
I
h
V
R
V
V
f
C
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
40 V, 5 A
PNP low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
(BISS) transistor
V
V
T
V
V
V
note 1
V
note 1
V
note 1
I
I
I
I
note 1
I
note 1
I
note 1
I
note 1
I
note 1
V
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
= 150 °C
= −0.5 A; I
= −1 A; I
= −2 A; I
= −4 A; I
= −5 A; I
= −5 A; I
= −4 A; I
= −5 A; I
= −5 V; I
= −30 V; I
= −30 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −10 V; I
= −10 V; I
CONDITIONS
B
B
B
B
B
B
B
7
C
= −10 mA
= −200 mA
= −200 mA;
= −500 mA;
= −200 mA;
= −500 mA;
C
C
C
C
B
C
= −500 mA;
E
E
C
E
= 0 A
= −5 mA
= −0.5 A
= −1 A;
= −2 A;
= −5 A;
= −2 A
= 0 A
= 0 A;
= i
= −0.1 A;
e
= 0 A;
−
−
−
250
200
150
50
−
−
−
−
−
−
−
−
−
60
−
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
45
−
−
−
−
−
TYP.
PBSS5540X
−100
−50
−100
−
−
−
−
120
170
160
340
375
75
−1.1
−1.2
−1.0
−
105
MAX.
Product data sheet
nA
μA
nA
mV
mV
mV
mV
mV
mΩ
V
V
V
MHz
pF
UNIT