BCV29,115 NXP Semiconductors, BCV29,115 Datasheet - Page 6
![TRANS DARL NPN 30V 500MA SOT89](/photos/5/27/52758/568-mpt3_sot-89-3_sc-62_to-243-3_sot89_sml.jpg)
BCV29,115
Manufacturer Part Number
BCV29,115
Description
TRANS DARL NPN 30V 500MA SOT89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BCV49135.pdf
(8 pages)
Specifications of BCV29,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
1.3W
Frequency - Transition
220MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933871570115
BCV29 T/R
BCV29 T/R
BCV29 T/R
BCV29 T/R
NXP Semiconductors
PACKAGE OUTLINE
2004 Dec 06
NPN Darlington transistors
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT89
1.6
1.4
A
b p1
0.48
0.35
0.53
0.40
b p2
w
IEC
M
b p3
1.8
1.4
0.44
0.23
1
c
b
e
p1
1
TO-243
JEDEC
4.6
4.4
D
0
b
D
e
p3
REFERENCES
2
2.6
2.4
E
b
p2
3.0
e
SC-62
scale
JEITA
6
2
3
1.5
e 1
L
B
A
E
p
4.25
3.75
H E
1.2
0.8
4 mm
L p
0.13
w
PROJECTION
EUROPEAN
c
H
BCV29; BCV49
E
Product data sheet
ISSUE DATE
04-08-03
06-03-16
SOT89