BST52,115 NXP Semiconductors, BST52,115 Datasheet

TRANS NPN 80V 500MA SOT89

BST52,115

Manufacturer Part Number
BST52,115
Description
TRANS NPN 80V 500MA SOT89
Manufacturer
NXP Semiconductors
Series
-r
Datasheets
1.BST50115.pdf (8 pages)
2.BST52_TR.pdf (8 pages)

Specifications of BST52,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.3V @ 500µA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.3W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
90 V
Maximum Dc Collector Current
1 A
Maximum Collector Cut-off Current
0.05 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933644270115
BST52 T/R
BST52 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BST52,115
Manufacturer:
BCD
Quantity:
20
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BST52,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product specification
Supersedes data of 2001 Feb 20
book, halfpage
DATA SHEET
BST50; BST51; BST52
NPN Darlington transistors
DISCRETE SEMICONDUCTORS
M3D109
2004 Dec 09

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BST52,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BST50; BST51; BST52 NPN Darlington transistors Product specification Supersedes data of 2001 Feb 20 M3D109 2004 Dec 09 ...

Page 2

Philips Semiconductors NPN Darlington transistors FEATURES High current (max. 0.5 A) Low voltage (max Integrated diode and resistor. APPLICATIONS Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION NPN Darlington transistor ...

Page 3

Philips Semiconductors NPN Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BST50 BST51 BST52 V collector-emitter voltage CES BST50 BST51 BST52 V emitter-base voltage EBO I collector current ...

Page 4

Philips Semiconductors NPN Darlington transistors CHARACTERISTICS unless otherwise specified. amb SYMBOL PARAMETER I collector-emitter cut-off current CES BST50 BST51 BST52 I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage V ...

Page 5

Philips Semiconductors NPN Darlington transistors 5000 handbook, full pagewidth h FE 4000 3000 2000 1000 ndbook, full pagewidth oscilloscope 200 ...

Page 6

Philips Semiconductors NPN Darlington transistors PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm ...

Page 7

Philips Semiconductors NPN Darlington transistors DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or ...

Page 8

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited ...

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