BCV28,115 NXP Semiconductors, BCV28,115 Datasheet - Page 3

• Manufacturer Part Number: BCV28,115
• Description: TRANS DARL PNP 30V 500MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BCV28,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 1.3W
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933871580115; BCV28 T/R; BCV28 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2004 Dec 06
V
V
V
I
I
I
P
T
T
T
R
R
C
CM
B
SYMBOL
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
PNP Darlington transistors
th(j-a)
th(j-s)
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BCV28
BCV48
BCV28
BCV48
PARAMETER
PARAMETER
open emitter
V
open collector
T
3
amb
BE
= 0 V
≤ 25 °C; note 1
CONDITIONS
note 1
CONDITIONS
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
BCV28; BCV48
96
16
−40
−80
−30
−60
−10
−500
−800
−100
1.3
+150
150
+150
Product data sheet
MAX.
UNIT
K/W
K/W
V
V
V
V
V
mA
mA
mA
W
°C
°C
°C
2
2
UNIT
.
.