BSR33,135 NXP Semiconductors, BSR33,135 Datasheet - Page 4
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BSR33,135
Manufacturer Part Number
BSR33,135
Description
TRANSISTOR PNP MEDIUM PWR SOT89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BSR30115.pdf
(7 pages)
Specifications of BSR33,135
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
1.35W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Dec 13
I
I
h
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
PNP medium power transistors
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
p
BSR30
BSR31; BSR33
BSR30
BSR31; BSR33
BSR30
BSR31; BSR33
= 300 μs; δ < 0.01.
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
C
C
C
C
= 0 A; V
= 0 A; V
= 0 A; V
= −100 μA; V
= −100 mA; V
= −500 mA; V
= −150 mA; I
= −500 mA; I
= −150 mA; I
= −500 mA; I
= −50 mA; V
4
CB
CB
EB
CONDITIONS
= −60 V
= −60 V; T
= −5 V
CE
B
B
B
B
CE
CE
CE
= −15 mA; note 1
= −50 mA; note 1
= −15 mA; note 1
= −50 mA; note 1
= −10 V;
= −5 V; note 1
= −5 V; note 1
= −5 V; note 1
j
= 150 °C
BSR30; BSR31; BSR33
−
−
−
10
30
40
100
30
50
−
−
−
−
100
MIN.
−100
−50
−100
−
−
120
300
−
−
−0.25
−0.5
−1
−1.2
−
Product data sheet
MAX.
nA
μA
nA
V
V
V
V
MHz
UNIT