BSR31,135 NXP Semiconductors, BSR31,135 Datasheet - Page 4

• Manufacturer Part Number: BSR31,135
• Description: TRANSISTOR PNP MEDIUM PWR SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSR31,135

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 1.35W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Dec 13
I
I
h
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
PNP medium power transistors
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
p
BSR30
BSR31; BSR33
BSR30
BSR31; BSR33
BSR30
BSR31; BSR33
= 300 μs; δ < 0.01.
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
C
C
C
C
= 0 A; V
= 0 A; V
= 0 A; V
= −100 μA; V
= −100 mA; V
= −500 mA; V
= −150 mA; I
= −500 mA; I
= −150 mA; I
= −500 mA; I
= −50 mA; V
4
CB
CB
EB
CONDITIONS
= −60 V
= −60 V; T
= −5 V
CE
B
B
B
B
CE
CE
CE
= −15 mA; note 1
= −50 mA; note 1
= −15 mA; note 1
= −50 mA; note 1
= −10 V;
= −5 V; note 1
= −5 V; note 1
= −5 V; note 1
j
= 150 °C
BSR30; BSR31; BSR33
−
−
−
10
30
40
100
30
50
−
−
−
−
100
MIN.
−100
−50
−100
−
−
120
300
−
−
−0.25
−0.5
−1
−1.2
−
Product data sheet
MAX.
nA
μA
nA
V
V
V
V
MHz
UNIT