PBSS8510PA,115 NXP Semiconductors, PBSS8510PA,115 Datasheet - Page 4

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PBSS8510PA,115

Manufacturer Part Number
PBSS8510PA,115
Description
TRANSISTOR PNP 100V 5.2A SOT1061
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS8510PA,115

Package / Case
3-HUSON
Mounting Type
Surface Mount
Power - Max
2.1W
Current - Collector (ic) (max)
5.2A
Voltage - Collector Emitter Breakdown (max)
100V
Transistor Type
NPN
Current - Collector Cutoff (max)
100nA
Frequency - Transition
150MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
95 @ 2A, 2V
Vce Saturation (max) @ Ib, Ic
340mV @ 260mA, 5.2A
Dc Collector/base Gain Hfe Min
30
Gain Bandwidth Product Ft
150 MHz
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
5.2 A
Maximum Dc Collector Current
6 A
Power Dissipation
2.1 W
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063924115
NXP Semiconductors
PBSS8510PA
Product data sheet
Fig 2.
Fig 3.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
−1
−1
1
1
10
10
3
2
3
2
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
0
0.1
duty cycle = 1
0.75
0.33
0.02
0
0.75
0.33
0.1
0.02
duty cycle = 1
0.05
0.01
10
10
0.5
0.2
0.05
0.01
0.5
0.2
−4
−4
10
10
−3
−3
All information provided in this document is subject to legal disclaimers.
10
10
2
−2
−2
Rev. 1 — 17 May 2010
10
10
−1
−1
100 V, 5.2 A NPN low V
1
1
10
10
PBSS8510PA
CEsat
10
10
2
2
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
t
p
p
006aab979
006aab980
(s)
(s)
10
10
3
3
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