PBSS306NZ,135 NXP Semiconductors, PBSS306NZ,135 Datasheet - Page 10

• Manufacturer Part Number: PBSS306NZ,135
• Description: TRANS NPN 100v 5.1A SOT-223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS306NZ,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 5.1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 255mA, 5.1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 110MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Power Dissipation: 2000 mW
• Maximum Operating Frequency: 110 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059047135; PBSS306NZ /T3; PBSS306NZ /T3

NXP Semiconductors
9. Package outline
10. Packing information
PBSS306NZ_2
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PBSS306NZ
Fig 15. Package outline SOT223 (SC-73)
For further information and the availability of packing methods, see
Packing methods
Package
SOT223
Rev. 02 — 11 December 2009
Dimensions in mm
7.3
6.7
3.7
3.3
Description
8 mm pitch, 12 mm tape and reel
1
2.3
6.7
6.3
3.1
2.9
4.6
100 V, 5.1 A NPN low V
2
4
3
0.8
0.6
1.1
0.7
Section
1.8
1.5
0.32
0.22
[1]
PBSS306NZ
04-11-10
Packing quantity
1000
-115
14.
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
4000
-135
10 of 14