BCV49,135 NXP Semiconductors, BCV49,135 Datasheet - Page 4

• Manufacturer Part Number: BCV49,135
• Description: TRANS DARL NPN 60V 500MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BCV49,135

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1.3W
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934003660135; BCV49 /T3; BCV49 /T3

NXP Semiconductors
CHARACTERISTICS
T
2004 Dec 06
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
NPN Darlington transistors
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
BCV29
BCV49
BCV29
BCV49
PARAMETER
I
I
I
V
V
I
I
I
E
E
C
C
C
C
C
CE
CE
I
I
I
I
I
I
I
I
= 0 A; V
= 0 A; V
= 0 A; V
= 100 mA; I
= 100 mA; I
= 10 mA; V
= 30 mA; V
C
C
C
C
C
C
C
C
= 5 V; see Fig.2
= 5 V; see Fig.2
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
4
CB
CB
EB
CONDITIONS
= 30 V
= 60 V
= 10 V
CE
CE
B
B
= 0.1 mA
= 0.1 mA
= 5 V
= 5 V; f = 100 MHz −
−
−
−
4 000
10 000 −
20 000 −
4 000
2 000
4 000
10 000 −
2 000
−
−
−
MIN.
BCV29; BCV49
−
−
−
−
−
−
−
−
−
−
−
220
TYP.
Product data sheet
100
100
100
−
−
−
−
−
−
−
−
1
1.5
1.4
−
MAX. UNIT
nA
nA
nA
V
V
V
MHz