PBSS4320X,135 NXP Semiconductors, PBSS4320X,135 Datasheet - Page 7

• Manufacturer Part Number: PBSS4320X,135
• Description: TRANS PNP 20V 3A SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4320X,135

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 310mV @ 300mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 1600 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057107135; PBSS4320X /T3; PBSS4320X /T3

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Nov 03
I
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
20 V, 3 A
NPN low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
(BISS) transistor
V
V
V
V
V
I
I
I
I
I
I
I
V
I
V
C
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CB
I
I
I
I
I
= 0.5 A; I
= 1 A; I
= 2 A; I
= 3 A; I
= 3 A; I
= 2 A; I
= 3 A; I
= 100 mA; V
C
C
C
C
C
= 5 V; I
= 20 V; I
= 20 V; I
= 20 V; V
= 2 V
= 2 V; I
= 10 V; I
= 0.1 A
= 0.5 A
= 1 A; note 1
= 2 A; note 1
= 3 A; note 1
B
B
B
B
B
B
= 50 mA
= 100 mA
= 300 mA; note 1
= 300 mA; note 1
= 100 mA
= 300 mA; note 1
CONDITIONS
C
B
C
7
E
E
E
= 0 A
= 50 mA
= 1 A
BE
= 0 A
= 0 A; T
= i
CE
= 0 V
e
= 5 V; f = 100 MHz 100
= 0 A; f = 1 MHz
j
= 150 °C
−
−
−
−
220
220
220
200
150
−
−
−
−
−
−
−
1.1
−
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
85
1.1
−
−
−
−
TYP.
PBSS4320X
Product data sheet
100
50
100
100
−
−
−
−
−
70
120
240
310
105
−
1.2
−
−
35
MAX.
nA
μA
nA
nA
mV
mV
mV
mV
mΩ
V
V
V
MHz
pF
UNIT