PBSS5350D,125 NXP Semiconductors, PBSS5350D,125 Datasheet - Page 3

• Manufacturer Part Number: PBSS5350D,125
• Description: TRANS PNP 50V 3A LO-SAT SC-74
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS5350D,125

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 750mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055946125

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
6. Thermal characteristics
Table 6.
[1]
[2]
PBSS5350D
Product data sheet
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
in free air; pulsed; t
All information provided in this document is subject to legal disclaimers.
Conditions
open emitter
open base
open collector
T
T
δ ≤ 0.5
Rev. 5 — 23 March 2011
amb
amb
≤ 25 °C
≤ 25 °C; pulsed; t
p
≤ 50 ms; δ ≤ 0.5
p
50 V, 3 A PNP low VCEsat (BISS) transistor
≤ 50 ms;
[1]
[2]
[2]
2
2
2
.
.
.
[1]
[2]
[2]
Min
-
-
-
PBSS5350D
Min
-
-
-
-
-
-
-
-
-
-
-65
-65
Typ
-
-
-
© NXP B.V. 2011. All rights reserved.
-60
-50
-6
150
150
Max
-3
-5
-1
600
750
1200
150
Max
208
160
100
2
.
Unit
V
V
V
A
A
A
mW
mW
mW
°C
°C
°C
Unit
K/W
K/W
K/W
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