PBSS4220V,115 NXP Semiconductors, PBSS4220V,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS4220V,115
• Description: TRANS NPN 20V 2A LOW SAT SOT666
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4220V,115

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 2A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 900mW
• Frequency - Transition: 210MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059259115; PBSS4220V T/R; PBSS4220V T/R

NXP Semiconductors
PBSS4220V_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Symbol
T
T
Fig 1.
amb
stg
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
Reflow soldering is the only recommended soldering method.
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
ambient temperature
storage temperature
Rev. 02 — 11 December 2009
P
(W)
tot
2
1.2
0.8
0.4
O
0
3
, standard footprint
0
…continued
(1)
(2)
(3)
40
2
O
3
Conditions
, standard footprint.
2
80
20 V, 2 A NPN low V
120
T
amb
006aaa424
(°C)
160
Min
−65
−65
PBSS4220V
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
+150
+150
Unit
°C
°C
2
.
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