BCP69-16,115 NXP Semiconductors, BCP69-16,115 Datasheet - Page 8

• Manufacturer Part Number: BCP69-16,115
• Description: TRANSISTOR PNP 20V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BCP69-16,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.4W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Transistor Type: PNP
• Frequency - Transition: 140MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 1V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1400 mW
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934009430115::BCP69-16 T/R::BCP69-16 T/R

NXP Semiconductors
BCP69_6
Product data sheet
Fig 7.
Fig 9.
(mV)
V
1000
h
BE
800
600
400
200
10
FE
10
0
3
2
10
10
V
BCP69-25: DC current gain as a function of
collector current; typical values
V
BCP69-25: Base-emitter voltage as a function
of collector current; typical values
CE
CE
1
1
= 1 V
= 1 V
1
1
10
10
10
10
2
2
10
10
3
I
3
I
C
C
mle309
mle304
(mA)
(mA)
Rev. 06 — 2 December 2008
10
10
4
4
Fig 8.
Fig 10. BCP69-25: Collector-emitter saturation voltage
V
(mV)
(A)
CEsat
I
C
10
10
2.4
2.0
1.6
1.2
0.8
0.4
10
0
1
3
2
10
0
T
BCP69-25: Collector current as a function of
collector-emitter voltage; typical values
I
as a function of collector current; typical
values
C
amb
/I
1
B
= 10
= 25 C
20 V, 1 A PNP medium power transistor
1
1
10
2
I
B
(mA) = 12.0
10
3
2
9.6
7.2
4.8
2.4
© NXP B.V. 2008. All rights reserved.
10
4
006aab404
I
3
V
C
CE
(mA)
BCP69
mle310
10.8
8.4
6.0
3.6
1.2
(V)
10
5
4
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