BFS20,215 NXP Semiconductors, BFS20,215 Datasheet - Page 3
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BFS20,215
Manufacturer Part Number
BFS20,215
Description
TRANS NPN 20V 25MA SOT233
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BFS20235.pdf
(6 pages)
Specifications of BFS20,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
25mA
Voltage - Collector Emitter Breakdown (max)
20V
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 7mA, 10V
Power - Max
250mW
Frequency - Transition
450MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40
Dc Current Gain Hfe Max
40 @ 7mA @ 10V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
450 MHz (Typ)
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
25 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Vce Saturation (max) @ Ib, Ic
-
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Vce Saturation (max) @ Ib, Ic
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933092111215
BFS20 T/R
BFS20 T/R
BFS20 T/R
BFS20 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS20,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Feb 05
R
I
I
h
V
C
C
f
SYMBOL
SYMBOL
j
CBO
EBO
T
FE
= 25 °C unless otherwise specified.
BE
NPN medium frequency transistor
th(j-a)
c
re
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
base-emitter voltage
collector capacitance
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
E
E
C
C
C
E
C
C
= 0; V
= 0; V
= 0; V
= 7 mA; V
= 7 mA; V
= I
= 0; V
= 5 mA; V
e
= 0; V
CB
CB
EB
CB
= 20 V
= 20 V; T
= 4 V
= 10 V; f = 1 MHz
CONDITIONS
CE
CE
CB
CE
3
= 10 V
= 10 V
= 10 V; f = 1 MHz
= 10 V; f = 100 MHz
note 1
CONDITIONS
j
= 100 °C
−
−
−
40
−
−
−
275
MIN.
VALUE
500
−
−
−
85
740
1
350
450
TYP.
Product data sheet
100
10
100
−
900
−
−
−
MAX.
BFS20
UNIT
K/W
nA
µA
nA
mV
pF
fF
MHz
UNIT