BFS19,215 NXP Semiconductors, BFS19,215 Datasheet

TRANS NPN 20V 30MA SOT23

BFS19,215

Manufacturer Part Number
BFS19,215
Description
TRANS NPN 20V 30MA SOT23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BFS19,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
30mA
Voltage - Collector Emitter Breakdown (max)
20V
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 1mA, 10V
Power - Max
250mW
Frequency - Transition
260MHz
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
65 @ 1mA @ 10V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
260 MHz (Typ)
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.03 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Vce Saturation (max) @ Ib, Ic
-
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Vce Saturation (max) @ Ib, Ic
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933083501215
BFS19 T/R
BFS19 T/R
Product data sheet
Supersedes data of 1999 Apr 15
DATA SHEET
BFS19
NPN medium frequency transistor
DISCRETE SEMICONDUCTORS
2004 Jan 05

Related parts for BFS19,215

BFS19,215 Summary of contents

Page 1

DATA SHEET BFS19 NPN medium frequency transistor Product data sheet Supersedes data of 1999 Apr 15 DISCRETE SEMICONDUCTORS 2004 Jan 05 ...

Page 2

... NXP Semiconductors NPN medium frequency transistor FEATURES • C(max) • CEO(max) APPLICATIONS • Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BFS19 Note Made in Hong Kong Made in Malaysia Made in China. ...

Page 3

... NXP Semiconductors NPN medium frequency transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM P total power dissipation tot T storage temperature stg ...

Page 4

... NXP Semiconductors NPN medium frequency transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain ...

Page 5

... NXP Semiconductors NPN medium frequency transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

Related keywords