BF822,215 NXP Semiconductors, BF822,215 Datasheet - Page 2

• Manufacturer Part Number: BF822,215
• Description: TRANSISTOR NPN 250V 50MA SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BF822,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 30mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V
• Power - Max: 250mW
• Frequency - Transition: 60MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 50 mA
• Maximum Dc Collector Current: 100 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933640890215; BF822 T/R; BF822 T/R

NXP Semiconductors
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BF821; BF823.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BF820
BF822
BF820
BF822
TYPENUMBER
NPN high-voltage transistors
* = t : Made in Malaysia.
* = W : Made in China.
TYPE NUMBER
NAME
−
−
MARKING CODE
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
1V*
1X*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
BF820; BF822
MAM255
Product data sheet
1
VERSION
SOT23
SOT23
3
2