BF820,215 NXP Semiconductors, BF820,215 Datasheet - Page 3

• Manufacturer Part Number: BF820,215
• Description: TRANS NPN 300V 50MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF820,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Transistor Type: NPN
• Frequency - Transition: 60MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 30mA
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 50 mA
• Maximum Dc Collector Current: 100 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933665120215::BF820 T/R::BF820 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
I
I
h
V
C
f
j
C
CM
BM
CBO
EBO
T
SYMBOL
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CEO
EBO
tot
= 25 °C unless otherwise specified.
CEsat
NPN high-voltage transistors
th(j-a)
re
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
feedback capacitance
transition frequency
BF820
BF822
BF820
BF822
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 25 mA; V
= 30 mA; I
= I
= 10 mA; V
c
= 0; V
CB
CB
EB
3
= 200 V
= 200 V; T
= 5 V
CONDITIONS
open emitter
open base
open collector
T
note 1
CB
B
amb
CE
CE
= 5 mA
= 30 V; f = 1 MHz
= 20 V
= 10 V; f = 100 MHz 60
≤ 25 °C; note 1
CONDITIONS
CONDITIONS
j
=150 °C
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
−
50
−
−
MIN.
MIN.
VALUE
500
BF820; BF822
300
250
300
250
5
50
100
50
250
+150
150
+150
10
10
50
−
600
1.6
−
Product data sheet
MAX.
MAX.
UNIT
K/W
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
nA
µA
nA
mV
pF
MHz
UNIT
UNIT