PUMH1T/R NXP Semiconductors, PUMH1T/R Datasheet - Page 2

• Manufacturer Part Number: PUMH1T/R
• Description: Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of PUMH1T/R

• Package: 6SOT-363
• Configuration: Dual
• Minimum Dc Current Gain: 60@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.15@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
• Control of IC inputs.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2003 Oct 08
PEMH1
PUMH1
PEMH1
PUMH1
NUMBER
TYPE NUMBER
applications
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
TYPE
* = t: Made in Malaysia.
* = W: Made in China.
PHILIPS
SOT666
SOT363
PACKAGE
handbook, halfpage
Top view
SC-88
EIAJ
SIMPLIFIED OUTLINE AND SYMBOL
6
1
5
2
MARKING CODE
3
4
MHC650
H*2
H2
TR1
2
(1)
6
1
QUICK REFERENCE DATA
DESCRIPTION
NPN/NPN resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
V
I
TR1
TR2
R1
R2
SYMBOL
O
CEO
R1
R2
5
2
R2
R1
PEMD2
PUMD2
collector-emitter
voltage
output current (DC)
NPN
NPN
bias resistor
bias resistor
COMPLEMENT
PARAMETER
4
3
TR2
NPN/PNP
PEMH1; PUMH1
PIN
1
2
3
4
5
6
−
−
−
−
22
22
PEMB1
PUMB1
TYP.
Product data sheet
COMPLEMENT
PINNING
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
PNP/PNP
DESCRIPTION
50
100
−
−
−
−
MAX.
V
mA
−
−
kΩ
kΩ
UNIT