BSV52,215 NXP Semiconductors, BSV52,215 Datasheet - Page 3

• Manufacturer Part Number: BSV52,215
• Description: TRANSISTOR NPN 12V 100MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BSV52,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 500MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 500 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933099000215; BSV52 T/R; BSV52 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 14
R
I
I
h
V
V
C
C
f
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
j
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN switching transistor
th(j-a)
c
e
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
PARAMETER
PARAMETER
I
I
I
V
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
C
Con
Boff
CE
I
I
I
= 0; V
= 0; V
= i
= 0; V
= 10 mA; I
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= i
= 10 mA; V
C
C
C
= −1.5 mA
= 10 mA; I
= 1 V
= 1 mA
= 10 mA
= 50 mA
e
c
= 0; V
= 0; V
CB
CB
EB
3
note 1
= 20 V
= 20 V; T
= 4 V
CONDITIONS
CB
EB
B
B
B
B
B
CE
= 300 µA
= 1 mA
= 5 mA
= 1 mA
= 5 mA
Bon
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
CONDITIONS
= 10 V; f = 100 MHz 400
= 3 mA;
j
= 125 °C
−
−
−
25
40
25
−
−
−
700
−
−
−
−
−
−
−
−
−
MIN.
VALUE
500
−
−
−
−
−
−
−
−
−
−
−
−
−
500
−
−
−
−
−
−
TYP. MAX. UNIT
Product data sheet
400
30
100
−
120
−
300
250
400
850
1. 2
4
4.5
−
10
4
6
20
10
10
BSV52
UNIT
K/W
nA
µA
nA
mV
mV
mV
mV
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns