BCV46,215 NXP Semiconductors, BCV46,215 Datasheet - Page 3

• Manufacturer Part Number: BCV46,215
• Description: TRANS DARL PNP 60V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCV46,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: PNP - Darlington
• Frequency - Transition: 220MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 10V
• Base-emitter Saturation Voltage (max): 1.5@0.1mA@100mAV
• Collector-emitter Saturation Voltage: 1@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 933932330215::BCV46 T/R::BCV46 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 13
V
V
V
I
I
I
P
T
T
T
R
C
CM
B
SYMBOL
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
PNP Darlington transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
BCV26
BCV46
BCV26
BCV46
PARAMETER
PARAMETER
open emitter
V
open collector
T
amb
BE
= 0
≤ 25 °C; note 1
3
note 1
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
500
BCV26; BCV46
−40
−80
−30
−60
−10
−500
−800
−100
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT