BC859C,215 NXP Semiconductors, BC859C,215 Datasheet - Page 2

• Manufacturer Part Number: BC859C,215
• Description: TRANSISTOR PNP 30V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC859C,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Transistor Type: PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933628690215::BC859C T/R::BC859C T/R

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BC859B
BC859C
BC859B
BC859C
BC860B
BC860C
NUMBER
PNP general purpose transistors
NUMBER
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE
MARKING
CODE
4B*
4C*
NAME
(1)
−
BC860B
BC860C
NUMBER
TYPE
plastic surface mounted package; 3 leads
MARKING
CODE
4G*
4F*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
BC859; BC860
MAM256
Product data sheet
1
VERSION
SOT23
3
2