BC860B,215 NXP Semiconductors, BC860B,215 Datasheet - Page 4

• Manufacturer Part Number: BC860B,215
• Description: TRANSISTOR PNP 45V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC860B,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 220
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933589850215::BC860B T/R::BC860B T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. V
2. V
2004 Jan 16
I
I
h
V
V
V
C
C
f
F
j
CBO
EBO
T
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
PNP general purpose transistors
c
e
BEsat
BE
decreases by about −2 mV/K with increasing temperature.
decreases by about −1.7 mV/K with increasing temperature.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
noise figure
BC859B; BC860B
BC859C; BC860C
BC859B; BC860B;
BC859C; BC860C
BC859B; BC860B;
BC859C; BC860C
PARAMETER
I
I
I
I
see Figs 2 and 3
I
I
I
I
I
I
I
I
I
I
f = 30 Hz to 15 kHz
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
C
C
C
C
= 0; V
= 0; V
= I
= 0; V
= −2 mA; V
= −10 mA; I
= −100 mA; I
= −10 mA; I
= −100 mA; I
= −2 mA; V
= −10 mA; V
= I
= −10 mA; V
= −200 μA; V
= −200 μA; V
e
c
= 0; V
= 0; V
CB
CB
EB
4
= −30 V
= −30 V; T
= −5 V
CONDITIONS
CB
EB
CE
CE
B
B
CE
CE
B
B
= −500 mV; f = 1 MHz −
= −10 V; f = 1 MHz
CE
CE
= −0.5 mA
= −0.5 mA; note 1
= −5 V;
= −5 V; note 2
= −5 mA
= −5 mA; note 1
= −5 V; note 2
= −5 V; f = 100 MHz 100
= −5 V; R
= −5 V; R
j
= 150 °C
S
S
= 2 kΩ;
= 2 kΩ;
−
−
−
220
420
−
−
−
−
−600
−
−
−
−
MIN.
BC859; BC860
−1
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
10
−
−
−
TYP.
Product data sheet
−15
−4
−100
475
800
−300
−650
−
−
−750
−820
−
−
−
4
4
MAX. UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB