BC850C,235 NXP Semiconductors, BC850C,235 Datasheet - Page 4

• Manufacturer Part Number: BC850C,235
• Description: TRANSISTOR NPN 45V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC850C,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933589700235; BC850C /T3; BC850C /T3

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. V
2. V
2004 Jan 16
I
I
h
V
V
V
C
C
f
F
j
CBO
EBO
T
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
NPN general purpose transistors
c
e
BEsat
BE
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BC849B; BC850B
BC849C; BC850C
BC849B; BC850B
BC849C; BC850C
PARAMETER
I
I
I
I
see Figs 2 and 3
I
see Figs 2 and 3
I
I
I
I
I
I
I
I
I
I
f = 10 Hz to 15.7 kHz
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
C
E
C
C
C
C
= 0; V
= 0; V
= i
= 0; V
= 10 μA; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= 10 mA; V
= 200 μA; V
= 200 μA; V
e
c
= 0; V
= 0; V
CB
CB
EB
4
CONDITIONS
= 30 V
= 30 V; T
= 5 V
CE
CE
CB
EB
B
B
CE
CE
CE
B
B
CE
CE
= 0.5 mA
= 0.5 mA; note 1
= 10 V; f = 1 MHz
= 500 mV; f = 1 MHz −
= 5 V;
= 5 V; note 2
= 5 mA
= 5 mA; note 1
= 5 V;
= 5 V; note 2
= 5 V; f = 100 MHz
= 5 V; R
= 5 V; R
j
= 150 °C
S
S
= 2 kΩ;
= 2 kΩ;
−
−
−
−
−
200
420
−
−
−
−
580
−
−
100
−
−
MIN.
BC849; BC850
−
−
−
240
450
290
520
90
200
700
900
660
−
2.5
11
−
−
−
TYP.
Product data sheet
15
5
100
−
−
450
800
250
600
−
−
700
770
−
−
−
4
4
MAX.
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB
UNIT