BCX71J,215 NXP Semiconductors, BCX71J,215 Datasheet - Page 3

• Manufacturer Part Number: BCX71J,215
• Description: TRANSISTOR PNP 45V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCX71J,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933483670215::BCX71J T/R::BCX71J T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Feb 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
PARAMETER
PARAMETER
open emitter
open base
open collector
T
amb
≤ 25 °C
3
note 1
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
500
BCX71 series
−45
−45
−5
−100
−200
−200
250
+150
150
+150
Product data sheet
MAX.
UNIT
K/W
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT