MMBT2222A,215 NXP Semiconductors, MMBT2222A,215 Datasheet - Page 3

• Manufacturer Part Number: MMBT2222A,215
• Description: TRANS NPN 40V 600MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBT2222A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 75V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Frequency (max): 300MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4509-2; 933545610215; MMBT2222A T/R; MMBT2222A T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jan 16
R
I
I
h
V
V
C
C
f
F
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
j
CBO
EBO
T
on
d
r
off
s
f
FE
SYMBOL
SYMBOL
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN switching transistor
th(j-a)
c
e
thermal resistance from junction to ambient note 1
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
3
I
I
I
I
I
I
I
T
I
I
I
I
I
I
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 100 MHz
I
R
I
I
E
E
C
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
Con
Boff
amb
S
= 0; V
= 0; V
= 0; V
= 0.1 mA; V
= 1 mA; V
= 10 mA; V
= 10 mA; V
= 150 mA; V
= 150 mA; V
= 500 mA; V
= 150 mA; I
= 500 mA; I
= 150 mA; I
= 500 mA; I
= i
= i
= 20 mA; V
= 100 µA; V
= 1 kΩ; f = 1 kHz
= −15 mA
= 150 mA; I
e
c
= −55 °C
= 0; V
= 0; V
CB
CB
EB
CONDITIONS
CONDITIONS
= 60 V
= 60 V; T
= 5 V
CB
EB
CE
CE
CE
CE
B
B
B
B
CE
CE
CE
CE
CE
= 500 mV;
= 10 V
= 10 V;
= 15 mA; note 1 −
= 50 mA; note 1 −
= 15 mA; note 1 0.6
= 50 mA; note 1 −
Bon
= 10 V
= 10 V;
= 20 V;
= 10 V
= 5 V;
= 10 V
= 1 V
= 10 V
= 15 mA;
j
= 125 °C
−
−
−
35
50
75
35
100
50
40
−
−
300
−
−
−
−
−
−
−
MIN.
VALUE
MMBT2222A
500
Product data sheet
10
10
10
−
−
−
−
300
−
−
300
1
1.2
2
8
25
−
4
35
15
20
250
200
60
MAX.
UNIT
K/W
nA
µA
nA
mV
V
V
V
pF
pF
MHz
dB
ns
ns
ns
ns
ns
ns
UNIT