BC847B,215 NXP Semiconductors, BC847B,215 Datasheet - Page 7

• Manufacturer Part Number: BC847B,215
• Description: TRANS NPN GP 100MA 45V SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC847B,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1633-2; 933589590215; BC847B T/R

NXP Semiconductors
BC847_BC547_SER_7
Product data sheet
Fig 1.
Fig 3.
V
(mV)
CEsat
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
400
300
200
100
10
10
10
0
10
10
3
2
V
Selection A: DC current gain as a function of
collector current; typical values
I
Selection A: Collector-emitter saturation
voltage as a function of collector current;
typical values
C
CE
amb
amb
amb
amb
amb
amb
1
1
/I
B
= 5 V
= 20
= 150 C
= 25 C
= 55 C
= 150 C
= 25 C
= 55 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
I
I
C
C
(mA)
(mA)
mgt723
mgt725
Rev. 07 — 10 December 2008
10
10
3
3
Fig 2.
Fig 4.
V
(mV)
(mV)
BEsat
V
BE
(1) T
(2) T
(3) T
1200
1000
(1) T
(2) T
(3) T
1200
1000
45 V, 100 mA NPN general-purpose transistors
800
600
400
200
800
600
400
200
0
10
0
10
V
Selection A: Base-emitter voltage as a
function of collector current; typical values
I
Selection A: Base-emitter saturation voltage
as a function of collector current; typical
values
C
amb
amb
amb
amb
amb
amb
CE
1
/I
1
B
BC847/BC547 series
= 5 V
= 10
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
© NXP B.V. 2008. All rights reserved.
2
2
I
I
C
C
(mA)
(mA)
mgt726
mgt724
10
10
3
3
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