MMBT3904,215 NXP Semiconductors, MMBT3904,215 Datasheet - Page 4

TRANS NPN 40V 200MA SOT23

MMBT3904,215

Manufacturer Part Number
MMBT3904,215
Description
TRANS NPN 40V 200MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of MMBT3904,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4510-2
933864360215
MMBT3904 T/R
MMBT3904 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBT3904,215
Manufacturer:
NXP Semiconductors
Quantity:
20 000
NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Feb 03
I
I
h
V
V
C
C
f
F
Switching times (between 10% and 90% levels); see Fig.3
t
t
t
t
amb
CBO
EBO
T
d
r
s
f
FE
SYMBOL
CEsat
BEsat
NPN switching transistor
c
e
= 25 °C unless otherwise specified.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage I
collector capacitance
emitter capacitance
transition frequency
noise figure
delay time
rise time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
I
I
V
I
I
I
I
I
f = 1 MHz
I
f = 100 MHz
I
f = 10 Hz to 15.7 kHz
I
I
E
C
C
C
C
C
E
C
C
C
Con
Boff
CE
I
I
I
I
I
= 0; V
= 0; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= I
= I
= 10 mA; V
= 100 µA; V
C
C
C
C
C
= −1 mA
= 10 mA; I
= 1 V; see Fig.2; note 1
= 0.1 mA
= 1 mA
= 10 mA
= 50 mA
= 100 mA
e
c
= 0; V
= 0; V
CB
EB
4
CONDITIONS
= 30 V
= 6 V
CB
BE
B
B
B
B
CE
CE
= 1 mA
= 5 mA
= 1 mA
= 5 mA
Bon
= 5 V; f = 1 MHz
= 500 mV;
= 20 V;
= 5 V; R
= 1 mA;
S
= 1 kΩ;
60
80
100
60
30
650
300
MIN.
50
50
300
200
300
850
950
4
8
5
35
35
200
50
MMBT3904
MAX.
Product data sheet
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
UNIT

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