PMBTA06,235 NXP Semiconductors, PMBTA06,235 Datasheet

TRANS NPN 80V 500MA SOT23

PMBTA06,235

Manufacturer Part Number
PMBTA06,235
Description
TRANS NPN 80V 500MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBTA06,235

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
4V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Power Dissipation
250mW
Frequency (max)
100MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
933776020235
PMBTA06 /T3
PMBTA06 /T3
Product data sheet
Supersedes data of 1999 Apr 29
DATA SHEET
PMBTA06
NPN general purpose transistor
DISCRETE SEMICONDUCTORS
2004 Jan 22

Related parts for PMBTA06,235

PMBTA06,235 Summary of contents

Page 1

DATA SHEET PMBTA06 NPN general purpose transistor Product data sheet Supersedes data of 1999 Apr 29 DISCRETE SEMICONDUCTORS 2004 Jan 22 ...

Page 2

... NXP Semiconductors NPN general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • General purpose switching and amplification in e.g. telephony and professional communication equipment. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: PMBTA56. MARKING ...

Page 3

... NXP Semiconductors NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain ...

Page 4

... NXP Semiconductors NPN general purpose transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 5

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 6

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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