BC857AT,115 NXP Semiconductors, BC857AT,115 Datasheet - Page 7

• Manufacturer Part Number: BC857AT,115
• Description: TRANSISTOR PNP 45V 100MA SC-75
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BC857AT,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934051100115; BC857AT T/R; BC857AT T/R

NXP Semiconductors
PACKAGE OUTLINE
2000 Nov 15
Plastic surface mounted package; 3 leads
PNP general purpose transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT416
0.95
0.60
A
max
0.1
A 1
1
0.30
0.15
b p
IEC
e 1
0.25
0.10
c
D
e
1.8
1.4
b p
3
D
JEDEC
0.9
0.7
E
2
REFERENCES
e
1
w
0
B
M
B
0.5
e
1
SC-75
scale
EIAJ
0.5
v
7
1.75
1.45
M
H
E
A
0.45
0.15
1 mm
L
p
A
A 1
0.23
0.13
Q
H E
BC856T; BC857T series
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
Product data sheet
X
ISSUE DATE
97-02-28
SOT416