BC847BW,135 NXP Semiconductors, BC847BW,135 Datasheet - Page 6
![TRANSISTOR NPN 45V 100MA SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BC847BW,135
Manufacturer Part Number
BC847BW,135
Description
TRANSISTOR NPN 45V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BC847A215.pdf
(15 pages)
Specifications of BC847BW,135
Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
200mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934021770135
BC847BW /T3
BC847BW /T3
BC847BW /T3
BC847BW /T3
NXP Semiconductors
7. Characteristics
BC847_BC547_SER_7
Product data sheet
Table 8.
T
[1]
[2]
Symbol Parameter
I
I
h
V
V
V
C
C
f
NF
CBO
EBO
T
amb
FE
CEsat
BEsat
BE
c
e
Pulse test: t
V
= 25 C unless otherwise specified.
BE
decreases by approximately 2 mV/K with increasing temperature.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage I
collector capacitance I
emitter capacitance
transition frequency
noise figure
Characteristics
h
h
h
h
h
h
FE
FE
FE
FE
FE
FE
p
group A
group B
group C
group A
group B
group C
300 s;
Rev. 07 — 10 December 2008
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
V
I
I
I
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 100 MHz
I
R
B = 200 Hz
C
C
C
C
C
C
E
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CE
S
= 150 C
= i
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= 10 mA; V
= 200 A; V
= 2 k ; f = 1 kHz;
= 5 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
e
c
= 0 A; V
= 0 A; V
45 V, 100 mA NPN general-purpose transistors
C
C
C
C
C
C
C
C
CE
E
E
B
B
= 0 A
= 10 A
= 10 A
= 10 A
= 2 mA
= 2 mA
= 2 mA
= 2 mA
CE
CE
B
B
CE
= 0.5 mA
= 0.5 mA
CB
EB
= 0 A
= 0 A;
= 5 V
= 5 mA
= 5 mA
= 5 V
= 5 V;
= 0.5 V;
= 5 V;
BC847/BC547 series
= 10 V;
[1]
[2]
[2]
[2]
Min
-
-
-
-
-
-
110
110
200
420
-
-
-
-
580
-
-
-
100
-
Typ
-
-
-
90
150
270
-
180
290
520
90
200
700
900
660
-
-
11
-
2
© NXP B.V. 2008. All rights reserved.
Max
15
5
100
-
-
-
800
220
450
800
200
400
-
-
700
770
1.5
-
-
10
Unit
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
A
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