BC857BW,135 NXP Semiconductors, BC857BW,135 Datasheet - Page 3
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BC857BW,135
Manufacturer Part Number
BC857BW,135
Description
TRANSISTOR PNP 45V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BC856AW135.pdf
(10 pages)
Specifications of BC857BW,135
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 2mA, 5V
Power - Max
200mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934021850135
BC857BW /T3
BC857BW /T3
BC857BW /T3
BC857BW /T3
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
2002 Feb 04
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
th j-a
SYMBOL
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
PARAMETER
PARAMETER
open emitter
open base
open collector
T
in free air; note 1
amb
3
≤ 25 °C; note 1
CONDITIONS
CONDITIONS
BC856W; BC857W; BC858W
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
625
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
200
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT