BC856BW,135 NXP Semiconductors, BC856BW,135 Datasheet - Page 5

• Manufacturer Part Number: BC856BW,135
• Description: TRANSISTOR PNP 65V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC856BW,135

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934021820135; BC856BW /T3; BC856BW /T3

NXP Semiconductors
2002 Feb 04
handbook, halfpage
handbook, halfpage
PNP general purpose transistors
V CEsat
BC857AW; V
(1) T
(2) T
(3) T
Fig.2
BC857AW; I
(1) T
(2) T
(3) T
Fig.4
(mV)
h FE
−10
−10
−10
500
400
300
200
100
−10
−10
−10
amb
amb
amb
amb
amb
amb
0
4
3
2
−1
−2
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
−10
= −5 V.
= 20.
−1
−1
(1)
(3)
(2)
−1
(1)
(2)
(3)
−10
−10
−10
−10
2
I C (mA)
I C (mA)
2
MGT711
MGT713
−10
−10
3
3
5
handbook, halfpage
handbook, halfpage
V BEsat
(mV)
V BE
(mV)
BC857AW; V
(1) T
(2) T
(3) T
Fig.3
BC857AW; I
(1) T
(2) T
(3) T
Fig.5
−1200
−1000
−1200
−1000
−800
−600
−400
−200
−800
−600
−400
−200
−10
−10
amb
amb
amb
amb
amb
amb
0
0
−2
−1
BC856W; BC857W; BC858W
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
−10
= −5 V.
= 20.
−1
−1
−1
(1)
(2)
(3)
−10
(1)
(2)
(3)
−10
−10
−10
Product data sheet
2
I C (mA)
I C (mA)
2
MGT712
MGT714
−10
−10
3
3