BC807,215 NXP Semiconductors, BC807,215 Datasheet - Page 6

• Manufacturer Part Number: BC807,215
• Description: TRANSISTOR PNP 500MA 45V SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC807,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 80MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Frequency (max): 80MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933589500215::BC807 T/R::BC807 T/R

NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 1.
Fig 3.
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
300
200
100
−10
0
V
Selection -16: DC current gain as a function of
collector current; typical values
V
Selection -40: DC current gain as a function of collector current; typical values
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −1 V
= −1 V
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−1
(1)
(2)
(3)
−10
h
FE
800
600
400
200
−10
−10
0
2
−1
I
006aaa119
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
(1)
(2)
(3)
−10
Fig 2.
BC807; BC807W; BC327
h
(1) T
(2) T
(3) T
FE
45 V, 500 mA PNP general-purpose transistors
600
400
200
−10
−10
0
V
Selection -25: DC current gain as a function of
collector current; typical values
2
−1
amb
amb
amb
CE
I
006aaa121
C
(mA)
= −1 V
= 150 °C
= 25 °C
= −55 °C
−10
−1
3
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa120
C
(mA)
−10
3
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