BC807,215 NXP Semiconductors, BC807,215 Datasheet - Page 10
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BC807,215
Manufacturer Part Number
BC807,215
Description
TRANSISTOR PNP 500MA 45V SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-25215.pdf
(19 pages)
Specifications of BC807,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
PNP
Frequency - Transition
80MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
250 mW
Maximum Operating Frequency
80 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Frequency (max)
80MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933589500215::BC807 T/R::BC807 T/R
NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values
(10) I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
T
B
B
B
B
B
B
B
B
B
B
amb
= −12.0 mA
= −10.8 mA
= −9.6 mA
= −8.4 mA
= −7.2 mA
= −6.0 mA
= −4.8 mA
= −3.6 mA
= −2.4 mA
= −1.2 mA
= 25 °C
(A)
I
−1.2
−0.8
−0.4
C
0
0
Rev. 06 — 17 November 2009
−1
−2
(5)
−3
BC807; BC807W; BC327
(4)
45 V, 500 mA PNP general-purpose transistors
(3)
−4
006aaa130
(2)
V
CE
(10)
(V)
(1)
(6)
(7)
(8)
(9)
−5
© NXP B.V. 2009. All rights reserved.
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