BC846B,235 NXP Semiconductors, BC846B,235 Datasheet - Page 7

• Manufacturer Part Number: BC846B,235
• Description: TRANSISTOR NPN 100MA 65V SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC846B,235

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Dc: 10+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933589560235; BC846B /T3; BC846B /T3

NXP Semiconductors
BC846_BC546_SER_7
Product data sheet
Fig 5.
Fig 7.
V
(mV)
CEsat
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
600
500
400
300
200
100
10
10
10
10
0
10
10
4
3
2
V
Selection B: DC current gain as a function of
collector current; typical values
I
Selection B: Collector-emitter saturation
voltage as a function of collector current;
typical values
C
−1
−1
CE
amb
amb
amb
amb
amb
amb
/I
B
= 5 V
= 20
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
1
1
(1)
(3)
(2)
10
10
(1)
(2)
(3)
10
10
2
2
I
I
C
C
(mA)
(mA)
mgt729
mgt727
Rev. 07 — 17 November 2009
10
10
3
3
Fig 6.
Fig 8.
V
(mV)
(mV)
V
BEsat
BE
1200
1000
1200
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
65 V, 100 mA NPN general-purpose transistors
800
600
400
200
800
600
400
200
0
0
10
10
V
Selection B: Base-emitter voltage as a function
of collector current; typical values
I
Selection B: Base-emitter saturation voltage
as a function of collector current; typical
values
−1
C
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
BC846/BC546 series
= 5 V
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
10
−1
1
(1)
(2)
(3)
1
(1)
(2)
(3)
10
10
10
© NXP B.V. 2009. All rights reserved.
2
10
I
C
I
2
C
(mA)
mgt730
mgt728
(mA)
10
10
3
3
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