KSC5402DTTU Fairchild Semiconductor, KSC5402DTTU Datasheet - Page 7
![TRANSISTOR NPN 450V 2A TO-220](/photos/5/30/53099/261-to-220-3_sml.jpg)
KSC5402DTTU
Manufacturer Part Number
KSC5402DTTU
Description
TRANSISTOR NPN 450V 2A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSC5402DTTU.pdf
(10 pages)
Specifications of KSC5402DTTU
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
750mV @ 200mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
6 @ 1A, 1V
Power - Max
50W
Frequency - Transition
11MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KSC5402DTTU
Manufacturer:
SANKEN
Quantity:
4 000
Part Number:
KSC5402DTTU
Manufacturer:
FAI
Quantity:
20 000
KSC5402D/KSC5402DT Rev. C0
© 2009 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 23. Forward Bias Safe Operating Area
0.01
450
400
350
300
250
200
150
100
160
140
120
100
Figure 19. Inductive Switching Time, t
Figure 21. Inductive Switching Time, t
0.1
50
10
80
60
40
1
0.4
10
0.4
I
V
V
L
C
C
=5I
CC
Z
=200
=300V
=15V
B1
=5I
μ
H
B2
V
0.6
0.6
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
I
DC
c
c
[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
T
T
J
0.8
J
0.8
=25 ℃
5ms
=125 ℃
100
1ms
1.0
1.0
T
T
J
=125 ℃
J
=25 ℃
50
μ
s
10
1.2
1.2
μ
s
I
V
V
L
C
C
CC
Z
=5I
=300V
=200
1
=15V
μ
B1
s
=2I
μ
H
c
fi
B2
1000
1.4
1.4
(Continued)
7
Figure 20. Inductive Switching Time, t
200
180
160
140
120
100
1.6
1.4
1.2
1.0
0.8
0.6
Figure 22. Inductive Switching Time, t
80
60
40
30
20
10
0
0.4
0.4
0
I
V
V
L
C
C
=5I
CC
Z
=300V
=200
=15V
B1
=2I
Figure 24. Power Derating
μ
H
B2
25
0.6
0.6
I
I
T
c
c
[A], COLLECTOR CURRENT
C
[A], COLLECTOR CURRENT
[ ], CASE TEMPERATURE
℃
50
0.8
0.8
T
75
J
=25 ℃
1.0
1.0
T
T
J
T
=125 ℃
J
=25 ℃
100
J
=125 ℃
1.2
1.2
125
I
V
V
L
C
C
=5I
CC
Z
=300V
=200
www.fairchildsemi.com
=15V
B1
=2I
μ
si
H
c
B2
1.4
150
1.4