MMBT5401-7 Diodes Inc, MMBT5401-7 Datasheet - Page 3

• Manufacturer Part Number: MMBT5401-7
• Description: TRANS PNP 150V 350MW SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT5401-7

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT5401; MMBT5401DITR; MMBT5401TR; MMBT5401TR

Ordering Information
Marking Information
Notes:
Date Code Key
MMBT5401
Document number: DS30057 Rev. 9 - 2
Month
Year
Code
Code
1,000
Fig. 5 Typical Gain-Bandwidth Product vs. Collector Current
100
10
10.0
0.01
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
1.0
1
0.1
1998
1
1
J
V
Jan
Fig. 3 Typical Collector-Emitter Saturation Voltage
CE
1
MMBT5401-7-F
Part Number
I
I
= 10V
C
B
1999
I , COLLECTOR CURRENT (mA)
C
= 10
K
I , COLLECTOR CURRENT (mA)
C
Feb
2000
2
T = 150°C
L
A
10
vs. Collector Current
T = 25°C
A
2001
(Note 5)
M
10
Mar
3
2002
N
100
T = -50°C
Apr
A
2003
4
P
K4M
2004
R
May
100
5
1,000
www.diodes.com
2005
S
SOT-23
Case
3 of 4
Jun
2006
6
T
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2007
U
Jul
1.0
0.9
0.8
0.6
0.5
0.4
0.3
0.2
0.7
0.1
7
0.1
2008
V
V
Fig. 4 Typical Base-Emitter Turn-On Voltage
CE
Aug
= 5V
2009
8
I , COLLECTOR CURRENT (mA)
W
C
2010
1.0
vs. Collector Current
X
Sep
9
T = -50°C
A
2011
Y
3000/Tape & Reel
T = 25°C
Packaging
Oct
A
O
2012
T = 150°C
Z
A
10
2013
MMBT5401
A
Nov
N
© Diodes Incorporated
2014
August 2008
B
100
Dec
D
2015
C