MMBT5401-7 Diodes Inc, MMBT5401-7 Datasheet - Page 2

• Manufacturer Part Number: MMBT5401-7
• Description: TRANS PNP 150V 350MW SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT5401-7

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT5401; MMBT5401DITR; MMBT5401TR; MMBT5401TR

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
MMBT5401
Document number: DS30057 Rev. 9 - 2
400
350
300
250
200
150
100
4. Short duration pulse test used to minimize self-heating effect.
50
0
0
Fig. 1 Power Dissipation vs. Ambient Temperature
25
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
50
75
100 125
@T
A
= 25°C unless otherwise specified
150
Note 1
175
200
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
C
h
CBO
EBO
NF
h
f
obo
FE
T
fe
2 of 4
-160
-150
Min
-5.0
100
10,000
50
60
50
40
⎯
⎯
⎯
⎯
⎯
⎯
1,000
100
10
1
Fig. 2 Typical DC Current Gain vs. Collector Current
1
Max
240
-0.2
-0.5
-1.0
200
300
-50
-50
6.0
8.0
⎯
⎯
⎯
⎯
⎯
V
CE
I , COLLECTOR CURRENT (mA)
= 5V
T = 150°C
C
A
MHz
Unit
nA
μA
nA
pF
dB
⎯
⎯
T = 25°C
V
V
V
V
V
10
A
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
f = 1.0kHz
V
f = 100MHz
V
R
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
CE
CE
CE
S
= -10μA, I
= -10mA, I
= -10mA, I
= -100μA, I
= -1.0mA, I
= -1.0mA, V
= -10mA, V
= -50mA, V
= -50mA, I
= -50mA, I
= 10Ω, f = 1.0kHz
= -3.0V, I
= -10V, I
= -5.0V, I
= -120V, I
= -120V, I
= -10V, f = 1.0MHz, I
= -10V, I
T = -50°C
A
100
Test Condition
C
B
B
B
B
C
C
B
C
C
E
= 0
E
E
= -1.0mA
= -1.0mA
= -5.0mA
= -5.0mA
= -1.0mA,
= -10mA,
CE
CE
CE
= 0
= 0
= 0
= -200μA,
= 0
= 0, T
MMBT5401
= -5.0V
= -5.0V
= -5.0V
© Diodes Incorporated
A
= 100°C
August 2008
1,000
E
= 0