BGA2776 T/R NXP Semiconductors, BGA2776 T/R Datasheet - Page 3

• Manufacturer Part Number: BGA2776 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFS
• Manufacturer: NXP Semiconductors
• Type: MMIC Wideband Medium Power Amplifierr

Specifications of BGA2776 T/R

• Operating Frequency: 1 GHz
• Noise Figure: 4.9 dB
• Bandwidth: 2800 MHz
• Operating Supply Voltage: 5 V
• Supply Current: 24.4 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA2776,115

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
V
I
P
T
T
P
R
I
R
R
NF
BW
P
P
IP3
IP3
S
S
S
SYMBOL
SYMBOL
SYMBOL
s
stg
j
S
tot
D
L(sat)
L 1 dB
MMIC wideband amplifier
th j-s
L IN
L OUT
21
= 5 V; I
(in)
(out)
2
S
= 24.4 mA; f = 1 GHz; T
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
thermal resistance from junction to
solder point
supply current
insertion power gain
return losses input
return losses output
noise figure
bandwidth
saturated load power
load power
input intercept point
output intercept point
PARAMETER
PARAMETER
PARAMETER
j
= 25 C; unless otherwise specified.
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
at s
f = 1 GHz
f = 2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
21
2
Rev. 04 – 29 August 2007
3 dB below flat gain at 1 GHz
CONDITIONS
RF input AC coupled
T
P
s
tot
= 200 mW; T
80 C
CONDITIONS
CONDITIONS
s
80 C
19
MIN.
24.4
23.2
23.2
9
7
17
9
4.9
5.3
2.8
10.5
8.1
7.2
6
18.6
14.4
65
4.6
8.8
MIN.
TYP.
Product specification
6
34
200
+150
150
10
34
VALUE
MAX.
MAX.
BGA2776
300
3 of 10
V
mA
mW
dBm
mA
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
C
C
UNIT
UNIT
UNIT
K/W