CGY41 (P) Infineon Technologies, CGY41 (P) Datasheet - Page 2

• Manufacturer Part Number: CGY41 (P)
• Description: RF Amplifier HiRel L&S-Band GaAs Gen Purpose Amp
• Manufacturer: Infineon Technologies
• Type: General Purpose Amplifierr

Specifications of CGY41 (P)

• Operating Frequency: 100 MHz to 3 GHz
• P1db: 18 dBm
• Noise Figure: 2.7 dB at 1.8 GHz
• Bandwidth: 3000 MHz
• Supply Current: 80 mA
• Maximum Power Dissipation: 440 mW
• Mounting Style: SMD/SMT
• Package / Case: Micro-X
• Number Of Channels: 1 Channel
• Package: Micro-X
• Comment: Also available in (H) and (S) quality
• Ids (max): 60.0 mA
• Vds (min): 5.5 V
• Nf(typ)@12ghz: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: CGY41PNZ

Maximum ratings
Drain-voltage
Gate-voltage
Drain-gate voltage
RF Input power
Channel temperature
Storage temperature range
Total power dissipation (T
Thermal resistance
Channel-soldering point
Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate
handling is required to protect the electrostatic sensitive MMIC against degradation due to excess
voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required
to achieve the guaranteed RF performance, stable operating conditions and adequate cooling.
1) @ V
2) Ts is measured on the source lead at the soldering point to the PCB.
IFAG IMM RPD D
D
> 4.5 V derating required.
1)
2)
S
< 82°C)
2)
Symbol
R
2 of 6
P
V
T
T
P
V
V
thChS
RF IN
DG
Ch
stg
tot
D
G
-55...+175
-4 ... 0.5
Value
175
440
160
5.5
9.5
16
Target DATASHEET
dBm
Unit
K/W
mW
CGY41
°C
°C
V
V
V