MJD243G ON Semiconductor, MJD243G Datasheet - Page 5

• Manufacturer Part Number: MJD243G
• Description: TRANS POWER NPN 4A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD243G

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 1V
• Power - Max: 1.4W
• Frequency - Transition: 40MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MJD243G; MJD243GOS

+11 V
0
DUTY CYCLE = 1.0%
10K
500
300
200
100
5K
3K
2K
1K
50
30
20
10
0.01
- 9.0 V
t
r
, t
f
≤ 10 ns
R
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
0.02
B
Figure 7. Switching Time Test Circuit
D
and R
1
1N5825 USED ABOVE I
MSD6100 USED BELOW I
0.03 0.05
25 ms
MUST BE FAST RECOVERY TYPE, e.g.:
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
I
C
Figure 9. Turn−Off Time
, COLLECTOR CURRENT (AMPS)
0.1
51
t
0.2
f
R
B
0.3
B
≈ 100 mA
B
100
200
≈ 100 mA
70
50
30
20
10
0.5
- 4 V
1
NPN MJD243
PNP MJD253
t
s
D
1
1
+ 30 V
V
2
CC
2
V
I
I
T
C
B1
J
CC
R
/I
= 25°C
B
C
= I
3
3
= 30 V
= 10
V
B2
Figure 11. Capacitance
R
http://onsemi.com
, REVERSE VOLTAGE (VOLTS)
SCOPE
5
5
10
7
5
C
ib
10
500
300
200
100
1K
50
30
20
10
200
100
5
3
2
1
0.01
C
70
50
30
20
10
ob
1.0
20
0.02
NPN MJD243
PNP MJD253
T
30
0.03 0.05
J
2.0
= 25°C
I
MJD243 (NPN)
MJD253 (PNP)
3.0
C
50
Figure 8. Turn−On Time
, COLLECTOR CURRENT (AMPS)
V
Figure 10. Capacitance
R
0.1
, REVERSE VOLTAGE (VOLTS)
70
5.0
t
r
t
d
100
0.2
7.0
0.3
C
C
ib
ob
10
0.5
1
20
V
I
T
C
J
CC
T
/I
30
= 25°C
J
B
2
= 25°C
= 30 V
= 10
3
50
5
70
10
100