MJD243G ON Semiconductor, MJD243G Datasheet - Page 4

• Manufacturer Part Number: MJD243G
• Description: TRANS POWER NPN 4A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD243G

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 1V
• Power - Max: 1.4W
• Frequency - Transition: 40MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MJD243G; MJD243GOS

- 1.0
- 1.5
- 2.0
- 2.5
500
300
200
100
7.0
5.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
50
30
20
10
0
0.04
0.04 0.06
0.04
NPN
MJD243
q
0.06
VB
0.06
T
V
T
V
J
BE(sat)
J
CE(sat)
FOR V
= 150°C
V
= 25°C
BE
25°C
- 55°C
0.1
@ V
0.1
0.1
@ I
BE
C
CE
I
I
I
C
C
/I
C
, COLLECTOR CURRENT (AMP)
B
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
= 1.0 V
= 10
0.2
0.2
0.2
0.4
0.4
0.4
25°C to 150°C
0.6
0.6
0.6
I
- 55°C to 25°C
C
/I
1.0
1.0
B
1.0
= 10
Figure 6. Temperature Coefficients
V
V
CE
CE
Figure 4. DC Current Gain
5.0
2.0
Figure 5. “On” Voltages
2.0
= 1.0 V
= 2.0 V
2.0
http://onsemi.com
4.0
4.0
4.0
4
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
200
100
7.0
5.0
3.0
2.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
50
30
20
10
0
0.04
0
0.04 0.06
0.04 0.06
PNP
MJD253
q
*q
0.06
VB
T
VC
V
V
V
*APPLIES FOR I
J
BE(sat)
CE(sat)
FOR V
BE
= 150°C
T
FOR V
- 55°C
J
25°C
@ V
= 25°C
0.1
0.1
0.1
@ I
BE
CE
CE(sat)
I
I
I
C
C
C
C
= 1.0 V
, COLLECTOR CURRENT (AMP)
/I
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
B
= 10
0.2
0.2
C
0.2
/I
B
≤ h
FE/3
0.4
0.4
0.4
25°C to 150°C
- 55°C to 25°C
0.6
0.6
0.6
25°C to 150°C
I
C
- 55°C to 25°C
/I
B
= 10
1.0
1.0
1.0
V
V
CE
CE
5.0
2.0
2.0
= 1.0 V
= 2.0 V
2.0
4.0
4.0
4.0