BCP68T1G ON Semiconductor, BCP68T1G Datasheet - Page 2
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BCP68T1G
Manufacturer Part Number
BCP68T1G
Description
TRANS NPN AUDIO 1A 25V SOT223
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of BCP68T1G
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
85 @ 500mA, 1V
Power - Max
1.5W
Frequency - Transition
60MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
1.5 W
Maximum Operating Frequency
60 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 at 5 mA at 10 V
Minimum Operating Temperature
- 65 C
Current, Collector
1 A
Current, Gain
60
Frequency
60 MHz
Package Type
SOT-223
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
20 V
Voltage, Collector To Base
25 V
Voltage, Collector To Emitter
20 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
20V
Collector-base Voltage
25V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
50
Frequency (max)
60MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BCP68T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCP68T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BCP68T1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (I
Emitter−Base Breakdown Voltage (I
Collector−Base Cutoff Current (V
Emitter−Base Cutoff Current (V
DC Current Gain
(I
(I
(I
Collector−Emitter Saturation Voltage (I
Base−Emitter On Voltage (I
Current−Gain − Bandwidth Product
(I
C
C
C
C
300
200
100
= 5.0 mAdc, V
= 500 mAdc, V
= 1.0 Adc, V
= 10 mAdc, V
10
1.0
CE
CE
CE
CE
= 1.0 Vdc)
Figure 1. DC Current Gain
= 5.0 Vdc)
= 10 Vdc)
I
= 1.0 Vdc)
C
, COLLECTOR CURRENT (mA)
10
C
Characteristics
T
= 1.0 Adc, V
J
EB
= 125°C
= 25°C
= − 55°C
CB
= 5.0 Vdc, I
E
= 25 Vdc, I
= 10 mAdc, I
C
TYPICAL ELECTRICAL CHARACTERISTICS
C
C
= 1.0 Adc, I
(T
= 100 mAdc, I
= 1.0 mAdc, I
CE
A
100
= 1.0 Vdc)
= 25°C unless otherwise noted)
C
E
= 0)
V
= 0)
C
CE
= 0)
B
= 1.0 V
= 100 mAdc)
E
B
= 0)
= 0)
BCP68T1
1000
2
300
200
100
70
50
30
10
V
V
V
Symbol
V
V
Figure 2. Current-Gain-Bandwidth Product
(BR)CEO
(BR)EBO
(BR)CES
CE(sat)
I
I
BE(on)
CBO
h
EBO
f
FE
T
V
T
f = 30 MHz
CE
J
= 25°C
= 10 V
I
C
, COLLECTOR CURRENT (mA)
Min
5.0
25
20
50
85
60
−
−
−
−
−
100
Typ
60
−
−
−
−
−
−
−
−
−
−
200
Max
375
0.5
1.0
10
10
−
−
−
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
−
1000