BCP68T1G ON Semiconductor, BCP68T1G Datasheet

BCP68T1G

Manufacturer Part Number

BCP68T1G

Description

TRANS NPN AUDIO 1A 25V SOT223

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.BCP68T1G.pdf (4 pages)

2.BCP68T1G.pdf (3 pages)

Specifications of BCP68T1G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

20V

Vce Saturation (max) @ Ib, Ic

500mV @ 100mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

85 @ 500mA, 1V

Power - Max

1.5W

Frequency - Transition

60MHz

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Configuration

Single Dual Collector

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

25 V

Emitter- Base Voltage Vebo

5 V

Continuous Collector Current

1 A

Maximum Dc Collector Current

1 A

Power Dissipation

1.5 W

Maximum Operating Frequency

60 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

50 at 5 mA at 10 V

Minimum Operating Temperature

- 65 C

Current, Collector

1 A

Current, Gain

Frequency

60 MHz

Package Type

SOT-223

Polarity

NPN

Primary Type

Voltage, Breakdown, Collector To Emitter

20 V

Voltage, Collector To Base

25 V

Voltage, Collector To Emitter

20 V

Voltage, Collector To Emitter, Saturation

0.5 V

Voltage, Emitter To Base

5 V

Number Of Elements

Collector-emitter Voltage

20V

Collector-base Voltage

25V

Emitter-base Voltage

Collector Current (dc) (max)

Dc Current Gain (min)

Frequency (max)

60MHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BCP68T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BCP68T1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

BCP68T1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

BCP68T1G

Quantity:

1 000

Company:

H&T Electronics

Part Number:

BCP68T1G

Quantity:

5 000

Current page: 1 of 3
Download datasheet (49Kb)

BCP68T1

NPN Silicon

Epitaxial Transistor

voltage, high current applications. The device is housed in the

SOT−223 package, which is designed for medium power surface

mount applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Total Power Dissipation @ T

(Note 1)

Derate above 25°C

Operating and Storage Temperature

Range

Thermal Resistance,

Junction−to−Ambient (Surface Mounted)

Lead Temperature for Soldering,

0.0625 in from case

Time in Solder Bath

This NPN Silicon Epitaxial Transistor is designed for use in low

thermal conduction, and allows visual inspection of soldered joints.

The formed leads absorb thermal stress during soldering, eliminating

the possibility of damage to the die

High Current: I

The SOT−223 package can be soldered using wave or reflow

SOT−223 package ensures level mounting, resulting in improved

The PNP Complement is BCP69T1

Pb−Free Packages are Available

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

Characteristic

Rating

= 1.0 A

= 25°C unless otherwise noted)

Preferred Device

= 25°C

Symbol

CEO

CBO

, T

EBO

qJA

stg

−65 to 150

Value

Max

83.3

260

5.0

1.0

1.5

mW/°C

°C/W

Unit

Vdc

Adc

Sec

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

BCP68T1

BCP68T1G

BCP68T3

BCP68T3G

MEDIUM POWER NPN SILICON

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

HIGH CURRENT TRANSISTOR

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

CA = Specific Device Code

SURFACE MOUNT

BASE

COLLECTOR 2,4

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

SOT−223

Package

CASE 318E

SOT−223

STYLE 1

EMITTER 3

1000/Tape & Reel

4000/Tape & Reel

Shipping

MARKING

DIAGRAM

AYW

CA G

†

Related parts for BCP68T1G

BCP68T1G Summary of contents

Page 1

... R 83.3 qJA °C T 260 L 10 Sec BCP68T1 BCP68T1G BCP68T3 BCP68T3G †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (I C Collector−Emitter Breakdown Voltage ( mAdc, I Emitter−Base Breakdown Voltage (I E Collector−Base Cutoff Current ( Vdc Emitter−Base Cutoff Current (V = 5.0 Vdc, ...

Page 3

... A 0.08 (0003) A1 2.0 0.079 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BCP68T1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

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