PMST2369,135 NXP Semiconductors, PMST2369,135 Datasheet - Page 2

• Manufacturer Part Number: PMST2369,135
• Description: TRANS NPN 15V 200MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PMST2369,135

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 500MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934030840135; PMST2369 /T3; PMST2369 /T3

NXP Semiconductors
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed switching applications, primarily in portable
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22
PMST2369
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
and consumer equipment.
stg
j
amb
CBO
CEO
EBO
tot
NPN switching transistor
∗ = t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
∗1J
(1)
open emitter
open base
open collector
t
T
p
amb
≤ 10 µs
≤ 25 °C; note 1
2
PINNING
handbook, halfpage
CONDITIONS
PIN
Fig.1 Simplified outline (SOT323) and symbol.
1
2
3
Top view
base
emitter
collector
1
3
−
−
−
−
−
−
−
−65
−
−65
DESCRIPTION
MIN.
2
MAM062
Product data sheet
40
15
5
200
300
100
200
+150
150
+150
PMST2369
1
MAX.
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT