2STC5949 STMicroelectronics, 2STC5949 Datasheet - Page 3

• Manufacturer Part Number: 2STC5949
• Description: TRANS NPN HP BIPO 250V TO-264
• Manufacturer: STMicroelectronics

Specifications of 2STC5949

• Transistor Type: NPN
• Current - Collector (ic) (max): 17A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 3V @ 800mA, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 220W
• Frequency - Transition: 25MHz
• Mounting Type: Through Hole
• Package / Case: TO-264
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 17 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Maximum Operating Frequency: 25 MHz
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6959-5

2STC5949
2
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
Electrical characteristics
(T
Table 4.
V
V
V
V
(BR)CEO
Symbol
(BR)EBO
CE(sat)
case
V
(BR)CBO
I
I
BE
h
CBO
EBO
f
FE
T
(1)
= 25 °C; unless otherwise specified)
(1)
(1)
(1)
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
breakdown voltage (I
Collector-base breakdown
voltage (I
Emitter-base breakdown
voltage (I
Collector-emitter
saturation voltage
Base-emitter voltage
DC current gain
Transition frequency
E
C
Electrical characteristics
= 0)
= 0)
Parameter
E
C
= 0)
= 0)
B
= 0)
V
V
I
I
I
I
I
I
I
I
C
C
E
C
C
C
C
C
CB
EB
= 1 mA
= 50 mA
= 100 µA
= 8 A
= 7 A
= 1 A
= 7 A
= 1 A
= 6 V
= 250 V
Test conditions
I
V
V
V
V
B
CE
CE
CE
CE
= 800 mA
= 5 V
= 5 V
= 5 V
= 5 V
Min.
Electrical characteristics
250
250
80
35
6
Typ.
25
Max.
160
1.5
5
5
3
MHz
Unit
µA
µA
V
V
V
V
V
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