BFX34 STMicroelectronics, BFX34 Datasheet - Page 2

• Manufacturer Part Number: BFX34
• Description: TRANSISTOR NPN 120V 5A TO-39
• Manufacturer: STMicroelectronics

Specifications of BFX34

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 500mA, 5A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 2A, 2V
• Power - Max: 870mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-39-3, TO-205AD, Metal Can
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2635-5

BFX34
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Symbol
V
V
R
R
CEO(sus)
(BR)CBO
V
CE(sat)
BE(sat)
C
C
thj-case
h
thj-amb
I
I
CES
EBO
EBO
t
f
t
EBO
CBO
FE
T
on
off
Thermal Resistance Junction-case
Thermal Resistance Junction-amb
Collector Cut-off
Current (V
Emitter Cut-off Current
(I
Collector-base
Breakdown Voltage
(I
Collector-Emitter
Sustaining Voltage
(I
Emitter-base Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Transition Frequency
Emitter-base
Capacitance
Collector-base
Capacitance
RESISTIVE LOAD
Turn-on Time
Turn-off Time
C
E
B
C
= 0)
= 0)
= 0)
= 0)
Parameter
BE
= 0)
V
V
I
I
I
I
I
I
I
I
f = 20 MHz
I
f = 1 MHz
I
f = 1 MHz
I
I
I
C
C
E
C
C
C
C
C
C
C
E
C
B1
CE
EB
= 5 mA
= 100 mA
= 1 mA
= 5 A
= 5 A
= 1 A
= 1.5 A
= 2 A
= 0.5 A
= 0
= 0
= 0.5 A
= -I
= 4 V
= 60 V
case
B2
= 25
= 0.5 A
Test Conditions
o
C unless otherwise specified)
V
V
I
I
V
V
V
V
V
B
B
CB
CE
CE
EB
CC
CE
CE
= 0.5 A
= 0.5 A
= 0.5 V
= 10 V
= 0.6 V
= 5 V
= 2 V
= 2 V
= 20 V
Max
Max
Min.
120
60
40
70
6
Typ.
0.02
0.05
100
100
300
200
0.4
1.3
0.6
0.6
75
80
40
35
Max.
0.25
150
500
100
1.6
1.2
10
10
1
o
o
Unit
MHz
C/W
C/W
pF
pF
V
V
V
V
V
A
A
s
s